| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5010441 | Solid-State Electronics | 2016 | 8 Pages |
Abstract
A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.
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Authors
Hassan El Dirani, Yohann Solaro, Pascal Fonteneau, Charles-Alex Legrand, David Marin-Cudraz, Dominique Golanski, Philippe Ferrari, Sorin Cristoloveanu,