Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010449 | Solid-State Electronics | 2016 | 8 Pages |
Abstract
Low-frequency noise (LFN) measurements are largely used for interface quality characterization in MOSFETs. In this work, a detailed investigation of LFN technique applied to pseudo-MOSFETs in bare silicon-on-insulator (SOI) substrates is provided. A physical model capable to describe the experimental results is proposed and validated using different die areas and inter-probe distances. The effective silicon area contributing to the noise signal, the impact of defects induced by probes and the possibility to extract interface trap density are addressed.
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Authors
L. Pirro, I. Ionica, S. Cristoloveanu, G. Ghibaudo,