Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010453 | Solid-State Electronics | 2016 | 6 Pages |
Abstract
In this paper we engineer a TiN⧹Al2O3⧹(Hf,Al)O2⧹Ta2O5⧹Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40 nm Ã 40 nm cell switches at 10 μA using write pulses shorter than 100 ns (resp. 1 μs) for Reset (resp. Set) and with amplitude <2 V. Using these conditions in a specially developed verify algorithm, a resistive window of 10à is reliably obtained, decreasing the write speed by more than 1 decade compared to state-of-the-art OxRRAM stacks at same current level.
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Engineering
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Authors
C.Y. Chen, L. Goux, A. Fantini, R. Degraeve, A. Redolfi, G. Groeseneken, M. Jurczak,