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Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

Article ID Journal Published Year Pages File Type
5023962 Materials & Design 2017 20 Pages PDF
Keywords
NMOSFETNiSiSchottky barrier
Related Topics
Physical Sciences and Engineering Engineering Engineering (General)
Preview
Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs
Authors
Keng-Hui Shen, Szu-Hung Chen, Wei-Ting Liu, Bao-Hsien Wu, Lih-Juann Chen,
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Materials & Design
Journal: Materials & Design
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