Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5024954 | Optik - International Journal for Light and Electron Optics | 2017 | 25 Pages |
Abstract
Al doped MnZnO thin films have been successfully deposited via the gel route by varying concentration of Al between 1 and 3%. Identification of the chemical components of the films was done using Fourier Transform Infrared Spectroscopy (FTIR). The structural properties evaluated by using X-ray diffraction showed that the Al doped MnZnO films are amorphous and only film with 3% Al doping exhibits hexagonal wurtzite structure along a-axis orientation. The surface morphological studies from Scanning Electron Microscope (SEM) showed the nano-crystalline grains on the surface. Transmission among the wavelength range 300-900Â nm was found to be decreased with increase of doping percentage of Al. The optical band gap was decreased from 3.46 to 3.4Â eV when% of Al doping was increased till 2.5%. Further increase in Al percentage to 3% increased band gap. The hysteresis curves showed ferromagnetic behavior and magnetic properties were enhanced with increase in Al%.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Engineering (General)
Authors
Zohra Nazir Kayani, Turfa Kausar, Saira Riaz, Shahzad Naseem,