| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5025145 | Optik - International Journal for Light and Electron Optics | 2017 | 7 Pages |
Abstract
The optoelectronic properties of the In/ZnO nanoparticles/In and Au/ZnO nanoparticles/Au devices under illumination by sunlight are determined. ZnO nanoparticles were prepared by the sol-gel method. It is shown that the value of photosensitivity for Au/ZnO nanoparticles/Au devices is larger than the value of photosensitivity for In/ZnO nanoparticles/In devices. This is because of the formation of the depletion region at the Au/ZnO interfaces. In order to understand the relationship between the visible-emission absorption and photosensitivity, sub-gap state generation is used to describe the mechanism for the sensitivity of ZnO nanoparticles to solar irradiation. A direct link between the sensitivity to solar irradiation, oxygen vacancies and the photo-response time is established.
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Authors
Yow-Jon Lin, Yao-Ming Chen, Hsing-Cheng Chang, Ya-Hui Chen,