| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5025259 | Optik - International Journal for Light and Electron Optics | 2017 | 6 Pages |
Abstract
An one-dimensional diffusion model is used to investigate the concentration profiles of Bi near the growing interface during LPE growth of AlSbBi and AlGaSbBi. The concentration profiles of Bi are obtained for different melt super cooling and cooling rates from which the optimum growth conditions are suggested. Calculated thickness of the grown layers as a function of growth time under different cooling rates show that lower cooling rates should be preferred for getting an uniform growth rate over time.
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Authors
M.K. Bhowal, S. Dhar,