Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5025267 | Optik - International Journal for Light and Electron Optics | 2017 | 26 Pages |
Abstract
The dependence of porous silicon (PS) morphology on fabrication conditions using electrochemical etching (ECE) was investigated. The porosity of the material is determined by gravimetric analysis. The effect of various etching time: 30, 60, and 120Â min with a constant DC current density of 5Â mA/cm2, on structural and optical properties of PS has been studied. The optical properties such as reflectivity, energetic transition, and refractive index were analyzed by using specific models. Photoluminescence spectroscopy (PL) was conducted to elaborate the energy gap of PS. UV-vis spectrometry was used to study the optical properties of processed samples with various percentage porosity: 9.47%, 33.39%, and 63.93%. The obtained results are in good agreement with both theoretical and experimental data.
Related Topics
Physical Sciences and Engineering
Engineering
Engineering (General)
Authors
Y. Al-Douri, N. Badi, C.H. Voon,