Second order nonlinear magneto-refraction and its dependence on field strength and detuning parameter in InSb semiconductors

This paper reports the second order non-linear magneto refraction in InSb semiconductor. The InSb possesses isotropic and non degenerate parabolic band structure allowing direct band to band electronic transitions irradiated by moderate power frequency doubled 10.6 m CW CO2 laser having photon energies in the vicinity of crystal band edges in the presence of a magneto static field ranging from 7 to 15 T, at 77 K. The radiation-excitation saturation concept with progressive screening and sharpening effects has been used along with the phenomenological incorporation to account for various decaying non optical processes in the computation process. The character of refractive index (absorption coefficient) has been analyzed with reference to field strength and detuning parameter along with pump intensity.