The effect of Al and In concentrations on the properties of electrodeposited Cu(In,Al)Se2 using two electrode system without the addition of complexing agents

The band gap energy of the films was controlled from 1.17 to 1.65 eV by adjusting the Al and In concentrations in the precursor solutions. The Raman analysis revealed that all the films mainly consist of a chalcopyrite structure and the film deposited at x = 0.25 contain the ternary compounds CuAlSe2 as secondary phase. This last film showed n-type conduction while the rest of the films showed p-type conduction. The electrical resistivity is in the range of 0.06-1.9 Ω cm.