Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5025581 | Optik - International Journal for Light and Electron Optics | 2017 | 10 Pages |
Abstract
Amorphous nitrogen doped nanostructured carbon a-C:N films were prepared on glass and silicon substrates by pulsed laser ablation of graphite target using Nd:YAG laser pulses at laser fluence of 11.1Â J/cm2. The effect of nitrogen gas pressure (2.5Â ÃÂ 10â2-7.5Â ÃÂ 10â1) mbar on the structural, optical and electrical properties of a-C:N thin films was investigated by using X-ray diffraction XRD, Scanning electron microscopy (SEM), energy dispersive x-ray EDX, Fourier transformation infrared spectroscopy FT-IR, Raman spectroscopy, UV-vis transmittance and Hall effect. The film prepared at higher nitrogen pressure exhibited maximum optical transmittance and the optical band gap decreasing from 2 to 1.75Â eV as nitrogen pressure increases from 2.5Â ÃÂ 10â2 to 7.5Â ÃÂ 10 â1Â mbar. Raman data confirms that the ID/IG ratio of a-C:N films increases as nitrogen pressure increase. Increases the nitrogen pressure leads to increasing the electron mobility and decreasing the electrical resistivity of deposited film. The electrical and photoresponse properties of a-C:N/Si heterojunction photodetectors was studied as function of nitrogen gas pressure.
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Authors
Raid A. Ismail, Ali M. Mousa, Zainab T. Hussain,