| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5025715 | Optik - International Journal for Light and Electron Optics | 2017 | 15 Pages |
Abstract
In this paper, a method for improving the non-resonance regime of the THz detection at room temperature by GaAs/AlGaAshetrostructure High Electron Mobility Transistor (HEMT) is proposed in the range of 0.1-1Â THz.In this method, by applying DC voltage to drain, the momentum relaxation time increases and as a result, the quality of parameter is reaching resonance regime. This leads THz HEMT detector to be able of operate in room temperature.
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Engineering (General)
Authors
M. Alabaf, H. Rasooli Saghai,