Optical nonlinearity in germanium and silicon semiconductor vis-a-vis temperature and wavelengths for sensing application

We deal with the “wide range of temperature” in germanium and silicon semiconductor structure at different wavelengths of IR regime for studying nonlinear behaviour of optical intensity to realize sensing application. The intensity of said structures are envisaged with the cogitation of absorption, reflection, diffraction and polarization losses, where losses are investigated for different temperatures, which range from 100 K to 750 K for silicon and 100-550 K for germanium at broad ranges of wavelengths. Computational results deal with aforementioned losses divulges that intensity emerging from silicon and germanium structure increases up to certain temperature and further starts to decrease with same. The nature of outcome is identical for all input signal which varies from 1.9 μm to 18 μm for Ge and 1.2-14 μm for Si. At the end, paper confirms the above non-linearity of light intensity with proposed semiconductor structure.