Design and evaluation of ARC less InGaP/AlGaInP DJ solar cell

The present study obtained a higher open circuit voltage with in the structure of a solar cell based on GaInP/GaAs using the AlGaInP semi-conductor instead of the GaAs because it has a larger bandwidth. An optimal structure was obtained at an impurity density of P = 2*1019 and n = 2*1017 and a thickness of p = 0.05 μm and n = 3.0 μm for the layers of the new cell. The parameters of photogeneration and electrical field were also examined in this model. This structure obtained a Voc = 3.347 V, Jsc = 1.759 (mA/cm2), FF = 90.90 and Eff = 53.51% under AM1.5 (1 sun) of illumination. The proposed cell structure was then compared with those of other models and the results were favorable.