Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5026230 | Optik - International Journal for Light and Electron Optics | 2017 | 25 Pages |
Abstract
The influence of N impurity on the electronic properties and absorption spectra of Ba2SiO4:Eu2+ is studied. It is found that N atoms doping provide many states near the Femi level, which results in narrow band gap and interband transition originating from N2p to the Eu4f. Eu2+ ions experience a strong nephelauxetic effect and crystal field because of the coordinating of N atoms and short coordination distance around the activated centers, which leads to Eu4f and5d states splitting. Therefore, the red-shift of the absorption spectrum in the wavelength of 220-470Â nm occurs for the N-doped Ba2SiO4:Eu2+ phosphors.
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Authors
Haitao Chen, Xuefei Huang, Weigang Huang, Wanqing Wang,