Phase grating patterning by direct laser recording on As2S3-Se nanomultilayers

Direct laser recording of surface relief gratings as phase holograms on successive evaporated As2S3 and Se nanomultilayers was studied in this paper. The surface relief gratings patterned on As2S3-Se nanomultilayers were investigated in dependence on polarization states of recording beams. It was shown that phase gratings are formed on the surface of the As2S3-Se nanomultilayers under the two linear polarized beams falling on the sample surface at (+45°)-(-45°) relative to grating vector and the left-right circular polarizations. The influence of photo-induced mass transport on the surface relief formation process is discussed.