| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5029363 | Procedia Engineering | 2016 | 4 Pages |
Abstract
The influence of chip temperature on the hydrogen sensitivity of the metal-insulator-semiconductor field-effect transistor (MISFET) with structure Pd-Ta2O5-SiO2-Si was experimentally investigated. MISFET sensing elements were fabricated on single silicon chip together with (p-n)-junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage for room and higher chip temperatures. The threshold voltage VT as a function of hydrogen concentration C was determined for different temperatures T. The models of hydrogen and temperature sensitivities based on the experimental dependencies of VT (C,T) are presented in this work.
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Authors
B. Podlepetsky, M. Nikiforova, A. Kovalenko,