Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5129152 | Procedia Manufacturing | 2017 | 6 Pages |
Abstract
Silicon nanowires (SiNWs) are synthesized by two-step metal-assisted chemical etching (MACE) using different etching parameters including AgNO3 concentrations (5/20/50Â mM) and H2O2 concentrations (0.03/0.1/0.3Â M). Diameter distributions of synthesized SiNWs with different parameters are analyzed. Gas emissions and nanoparticle wastes in SiNWs synthesis process are theoretically calculated and experimentally tested. The effects of etching parameters on etching rate are investigated.Fig. A.. Gas emissions with different etching conditions. (a) H2O2 0.3Â M with variable AgNO3 concentrations (5/20/50Â mM); (b) AgNO3 20Â mM with variable H2O2 concentrations (0.03/0.1/0.3Â M).
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Authors
Fenfen Wang, Xianfeng Gao, Lulu Ma, Tao Li, Chris Yuan,