Article ID Journal Published Year Pages File Type
5129152 Procedia Manufacturing 2017 6 Pages PDF
Abstract

Silicon nanowires (SiNWs) are synthesized by two-step metal-assisted chemical etching (MACE) using different etching parameters including AgNO3 concentrations (5/20/50 mM) and H2O2 concentrations (0.03/0.1/0.3 M). Diameter distributions of synthesized SiNWs with different parameters are analyzed. Gas emissions and nanoparticle wastes in SiNWs synthesis process are theoretically calculated and experimentally tested. The effects of etching parameters on etching rate are investigated.Fig. A.. Gas emissions with different etching conditions. (a) H2O2 0.3 M with variable AgNO3 concentrations (5/20/50 mM); (b) AgNO3 20 mM with variable H2O2 concentrations (0.03/0.1/0.3 M).

Related Topics
Physical Sciences and Engineering Engineering Industrial and Manufacturing Engineering
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