Control of Mg content and carrier concentration via post annealing under different Mg partial pressures for Sb-doped Mg2Si thermoelectric material

Carrier concentration of Mg2Si0.99Sb0.01 annealed under low and high Mg partial pressures. The value decreases and increases during annealing under low and high Mg partial pressures, respectively, due to Mg transfer between the sample and gas phase.234