Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5346986 | Applied Surface Science | 2017 | 6 Pages |
Abstract
Peculiarities of heteroepitaxial growth of CdSb thin films on AIIBVI and AIIIBVI single crystal substrates were studied by atomic-force and scanning electron microscopy. New thin film CdSb-Cd1-Ñ
MnÑ
Te and CdSb-In4(Se3)1-Ñ
Тe3Ñ
heterojunctions were obtained by high-frequency cathode sputtering of CdSb single crystal target. Laser treatment of CdSb films using millisecond YAG-laser with energy density of 0.1-4.5Â J/Ñm2 has been carried out in order to modify and improve their structure and phase state. Stoichiometry of composition and granular polycrystalline structure of CdSb films on Cd1-Ñ
MnÑ
Te and In4(Se3)1-Ñ
Тe3Ñ
substrates have been confirmed by SEM and AFM studies. A stepwise growth processes of grains were detected under laser treatment in CdSb films. Anisotropic shape of grains in CdSb films was found depending on crystallographic orientation of In4Se3 substrate surface.
Related Topics
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Authors
A.I. Savchuk, P.M. Fochuk, V.V. Strebezhev, G.I. Kleto, I.Ð. Yuriychuk, Y.B. Khalavka, Yu.K. Obedzynskyi, V.Ð. Strebezhev,