| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5347158 | Applied Surface Science | 2018 | 5 Pages |
Abstract
ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.
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Authors
Yuanxi Lu, Jian Huang, Bing Li, Ke Tang, Yuncheng Ma, Meng Cao, Lin Wang, Linjun Wang,