Correlation between oxidant concentrations, morphological aspects and etching kinetics of silicon nanowires during silver-assist electroless etching

Cross section SEM images of silicon nanowires prepared in etchant solution composed of 4% HF and 4.5% H2O2 for different etching time: A) 30 min, B) 60 min,C) 90 mn, D) 180 min, E)120 min and F) 240 min. J) Height of silicon nanowire versus time for three different H2O2 concentration.