| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5347532 | Applied Surface Science | 2017 | 5 Pages |
Abstract
The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be â0.78 ± 0.30 eV, while the conduction band offset was determined to be â0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.
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Authors
Patrick H. IV, F. Ren, David C. Hays, B.P Gila, S.J. Pearton, Soohwan Jang, Akito Kuramata,