Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5347665 | Applied Surface Science | 2016 | 40 Pages |
Abstract
This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO2) films in the terahertz (THz) frequency range, namely the transition temperature TIMT, the amplitude contrast of the THz transmission over the IMT ÎA, the transition sharpness ÎT and the hysteresis width ÎH. XRD analysis shows the sole formation of VO2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O2 pressure (PO2) during the deposition process from 2 to 25Â mTorr. THz transmission measurements as a function of temperature reveal that VO2 films obtained at low PO2 exhibit low TIMT, large ÎA, and narrow ÎH. Increasing PO2 results in VO2 films with higher TIMT, smaller ÎA, broader ÎH and asymmetric hysteresis loop. The good control of the VO2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Nicolas Ãmond, Ali Hendaoui, Akram Ibrahim, Ibraheem Al-Naib, Tsuneyuki Ozaki, Mohamed Chaker,