| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5347893 | Applied Surface Science | 2016 | 20 Pages |
Abstract
- Memory window and retention properties are improved employing HIBAS technique.
- The O/Si ratio and radiative recombination are changed by HIBAS.
- Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs.
- The mechanism of hydrogen ion beam alters the memory properties is investigated.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Sheng-Wen Fu, Hui-Ju Chen, Hsuan-Ta Wu, Bing-Ru Chuang, Chuan-Feng Shih,