| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348048 | Applied Surface Science | 2016 | 26 Pages |
Abstract
- The formation of pure and stoichiometric MoS2 thin film by atomic layer deposition (ALD).
- ALD of MoS2 using Mo(CO)6 and H2S plasma.
- Large-area (4Â in. in diameter) and direct growth of MoS2 thin films and nanosheets by ALD.
- Remarkable step coverage at 100Â nm trench.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yujin Jang, Seungmin Yeo, Han-Bo-Ram Lee, Hyungjun Kim, Soo-Hyun Kim,