Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5348099 | Applied Surface Science | 2017 | 13 Pages |
Abstract
The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM).1 This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence (PL)2 measurements revealed deviations from their predicted bandgap, suggesting non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the new arrangement of layers and the post-growth annealing treatments has been reported. Our results show that the small compositional fluctuations of the as-grown heterostructures disappear after being annealed, and the bandgap energy correspondingly increases towards the predicted value.
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Authors
N. Baladés, D.L. Sales, M. Herrera, F.J. Delgado, M. González, K. Clark, P. Pinsunkajana, N. Hoven, S. Hubbard, S. Tomasulo, J.R. Walters, S.I. Molina,