| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348102 | Applied Surface Science | 2017 | 9 Pages |
Abstract
The contribution employs electrical simulation to assess the effect of the distribution of aluminium in the metal/GaN/AlGaN heterostructure on the leakage current. The heterostructure is characterized by a high density of traps causing an increase of the leakage current consisting of the thermionic emission component and of a non-negligible contribution of trap-assisted tunnelling. The leakage current is highly sensitive to the bending of the potential barrier Ec in the subsurface region of the GaN/AlGaN structure. The band bending is strongly affected by the sheet bound charge at the first GaN/AlGaN/GaN interface due to spontaneous and piezoelectric polarization. The overall charge depends on the concentration of Al, the distribution of Al at the first heterointerface having a strong effect on the formation of the potential barrier.
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Authors
Juraj Racko, Peter Benko, Miroslav MikoláÅ¡ek, Ralf Granzner, Mario Kittler, Frank Schwierz, Ladislav Harmatha, Juraj Breza,