Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5348115 | Applied Surface Science | 2017 | 8 Pages |
Abstract
Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (nWC = 1.02 and nZr = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCRWC = 3.03 and OCRZr = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.C. Piñero, D. Araújo, A. Fiori, A. Traoré, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji,