Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

Article ID	Journal	Published Year	Pages	File Type
5348371	Applied Surface Science	2015	5 Pages	PDF

Abstract

The high crystallization temperature and data retention of Sb52Se36Te12 indicating better thermal stability than both Sb4Te and Ge2Sb2Te5. SET/RESET speed of 8Â ns was realized showing the fast switching speed. Brilliant data retention and fast switching speed make Sb52Se36Te12 a promising material for application in PCM.

Keywords

Phase change memory (PCM)Transmission electron microscopy (TEM)Data retention X-ray diffraction (XRD)

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

Authors

Liangliang Chen, Sannian Song, Zhitang Song, Le Li, Zhonghua zhang, Yonghui Zheng, Qianqian Zheng, Xin Zhang, Xiuwei Zhu, Hehong Shao,