Article ID Journal Published Year Pages File Type
5348374 Applied Surface Science 2015 4 Pages PDF
Abstract

- TNO films were deposited by co-sputtering with a TiO2 target and a Nb target.
- The effect of Nb concentration on properties of TNO films was studied.
- The lowest resistivity was 1.2 × 10−3 Ω cm at the Nb concentration of 7.0 at.%.
- Hall mobility and carrier density were 2.0 cm2/Vs and 2.6 × 1021 cm−3, respectively.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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Transparent conductive Nb-doped TiO2 films deposited by RF magnetron co-sputtering
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