Bonding and interface formation for Si on Ag(1Â 1Â 1) by core-level photoemission spectroscopy

Synchrotron-radiation core-level photoemission spectroscopy has been utilized to explore the growth and annealing processes of silicon growth on the Ag(1 1 1) surface. Above 230 °C, adsorbed silicon atoms start to evaporate from the surface. No evidence of Si in-diffusion or formation of Si-Ag alloy was observed. Two components are visually discernible in the Si 2p spectra for all coverages and various growth temperatures. This observation and the analysis of the Ag 3d line shapes indicate the Si-Ag interface has similar bonding properties regardless of the reconstructions and thickness. The results are consistent with the growth scenarios that the top surface is terminated by some amounts of segregated silver atoms and has a similar structure to the Ag/Si(1 1 1)-(3×3)R30° surface.