| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348473 | Applied Surface Science | 2015 | 14 Pages |
Abstract
- The defects growth increased rapidly at low dose, and then significantly slowed down before continued amorphous layer formed.
- The swelling of implantation region results from the combination of surface roughing and the decrease in the surface density.
- Both melting on the top surface and recrystallization at crystalline/amorphous interface have existed as annealing at 2400Â K, which is near the melting point.
- Ga ions migrated together and were swept by the c-Si/a-Si interface during annealing, left sunken at the surface.
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Authors
Y.J. Xiao, F.Z. Fang, Z.W. Xu, X.T. Hu,