Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5348526 | Applied Surface Science | 2016 | 5 Pages |
Abstract
CdZnTe films with thickness above 50 μm were deposited at temperatures of 200-500 °C by Close Space Sublimation method. A peel-off approach has been adopted to study the interface chemistry of CdZnTe thick films. For all the CdZnTe films, the scanning electron microscopy images show the small and round-like grains formed at interface in contrast to the large ordered grains at surface. For CdZnTe films grown at a low substrate temperature of 200 °C, the interface layer between CdZnTe and substrate is mixed with Te and CdTe, as evidenced by X-ray diffraction, Raman and X-ray photoelectron spectroscopy results. The thickness of the interface layer can be estimated to be 84 nm by depth profile using X-ray photoelectron spectroscopy. In contrast, a thin interface layer less than 14 nm is found at a high substrate temperature of 500 °C. The limited reaction of Te2 and Cd (Zn) to CdZnTe at a low growth temperature is responsible for the formation of the thick interface layer and a slow deposition rate at the nucleation stage.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jun Tao, Haitao Xu, Yuelu Zhang, Huanhuan Ji, Run Xu, Jian Huang, Jijun Zhang, Xiaoyan Liang, Ke Tang, Linjun Wang,