Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5348547 | Applied Surface Science | 2016 | 6 Pages |
Abstract
Electromigration has become a critical issue for reliability in Sn-based conducting materials that are used in advanced microelectronic packages with micro-joint integration. In this study, a Blech structure was used to characterize the Sn electromigration behavior of various strip lengths (L0 = 10-100 μm). We established a mathematical model based on the fundamental electromigration theory to describe the correlation between the residual strip length (L) and the current stressing time (t). A three-stage mechanism was proposed to rationalize the Sn electromigration in the Blech structure. A good agreement between the mathematical model and experimental data was obtained, advancing our understanding of Sn electromigration.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
C.E. Ho, W.Z. Hsieh, C.H. Yang, P.T. Lee,