| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348552 | Applied Surface Science | 2016 | 5 Pages |
Abstract
Heterojunctions were fabricated by spinning triisopropylsilyl (TIPS) Pentacene films on n-Si. The electrical transport measurements reveal that the heterojunctions possess good Schottky-type rectifying capability. The electrical parameters of the devices are derived by applying thermionic emission model. The electrical characteristics of the devices are found to be strongly related to the thickness of TIPS Pentacene film. A high barrier height demonstrated in the device formed with thin TIPS Pentacene can be explained by a low image force lowering and small roughness of the film. The large rectification ratio accompanied with the low reverse saturation current exhibited in the device with thin film may be attributed to this high barrier height formed in the junction. A depletion width in Si was estimated to be â¼860Â nm in TIPS Pentacene/Si junctions from the zero-bias capacitance measured at 1Â MHz.
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Authors
Ke Wang, Ya Huang, Ruofei Chen, Zhan Xu,