| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348555 | Applied Surface Science | 2016 | 4 Pages |
Abstract
In this paper, the growth of boron (10B) oxide films on (1Â 0Â 0) silicon substrate were achieved by radio frequency (r.f.) magnetron sputtering under the different oxygen partial pressure with a target of boron and boron oxide. The structure and properties of deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy spectrometer (FTIR), X-ray photoelectron spectroscopy (XPS), respectively. The results showed that the substrate was covered with boron-rich films tightly and the surface of films was covered with B2O3. And the growth mechanism of boron-rich film in oxygen atmosphere was also analyzed.
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Authors
Zhangmin Pan, Yiming Yang, Jian Huang, Bing Ren, Hongze Yu, Run Xu, Huanhuan Ji, Lin Wang, Linjun Wang,