| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348585 | Applied Surface Science | 2016 | 5 Pages |
Abstract
The GaAs/AlAs superlattice multilayer structures were deposited on GaAs (1Â 0Â 0) substrates by molecular beam epitaxial (MBE) technique. The as-prepared samples were characterized respectively by Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) depth profiling techniques. The measured depth profiles were then fitted by the Mixing-Roughness-Information (MRI) model. The depth resolution values for both depth profiling techniques were evaluated quantitatively from the fitted MRI parameters and the as-prepared GaAs/AlAs multilayer structure was determined accordingly.
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Authors
H.L. Kang, J.B. Lao, Z.P. Li, W.Q. Yao, C. Liu, J.Y. Wang,