Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5348813 | Applied Surface Science | 2015 | 6 Pages |
Abstract
The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70Â fA/cm2 and below.
Related Topics
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Physical and Theoretical Chemistry
Authors
H. Meddeb, T. Bearda, M. Recaman Payo, I. Abdelwahab, Y. Abdulraheem, H. Ezzaouia, I. Gordon, J. Szlufcik, J. Poortmans,