| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348936 | Applied Surface Science | 2015 | 5 Pages |
Abstract
The aqueous sodium sulfide solution has been used for pre-epitaxial preparation of epi-ready InSb (0Â 0Â 1) substrates for molecular beam epitaxy (MBE) of InSb layers. X-ray photoemission spectroscopy study shows that the S-treated surface of InSb (0Â 0Â 1) substrate generally does not contain a native oxide layer and is covered with a sulfide protecting overlayer. Atomic-force microscopy and transmission electron microscopy have been applied to compare surface topography and structural properties of InSb layers grown by MBE on S-treated and untreated epi-ready InSb (0Â 0Â 1) substrates. The MBE growth of InSb layers with very smooth surface possessing the root-mean-square roughness as low as 0.1Â nm and good structural quality has been demonstrated on the S-treated substrates.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
V.A. Solov'ev, I.V. Sedova, T.V. Lvova, M.V. Lebedev, P.A. Dement'ev, A.A. Sitnikova, A.N. Semenov, S.V. Ivanov,