| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5349145 | Applied Surface Science | 2014 | 5 Pages |
Abstract
The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after â¼4Â h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.
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Authors
Jihua Yang, Richard Liptak, David Rowe, Jeslin Wu, James Casey, David Witker, Stephen A. Campbell, Uwe Kortshagen,