Article ID Journal Published Year Pages File Type
5349149 Applied Surface Science 2014 4 Pages PDF
Abstract

- We examine the underlying reasons for the anisotropic lithiation of Si over Ge in the crystalline phase.
- Crystalline Si is lithiated in a layer-by-layer fashion, yielding a sharp amorphous-crystalline interface.
- Lithiated c-Ge exhibits a graded lithiation front, which proceeds much faster than that in c-Si.
- Lithiation behavior tends to be subject to the stiffness and dynamics of the host matrix.
- We reveal the origin and extended impacts of the anisotropic Si vs. isotropic Ge lithiation.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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