Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5349149 | Applied Surface Science | 2014 | 4 Pages |
Abstract
- We examine the underlying reasons for the anisotropic lithiation of Si over Ge in the crystalline phase.
- Crystalline Si is lithiated in a layer-by-layer fashion, yielding a sharp amorphous-crystalline interface.
- Lithiated c-Ge exhibits a graded lithiation front, which proceeds much faster than that in c-Si.
- Lithiation behavior tends to be subject to the stiffness and dynamics of the host matrix.
- We reveal the origin and extended impacts of the anisotropic Si vs. isotropic Ge lithiation.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Chia-Yun Chou, Gyeong S. Hwang,