Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5349286 | Applied Surface Science | 2018 | 9 Pages |
Abstract
Effects of lattice and polar/nonpolar mismatch between the GaP layer and Ge(111) substrate are investigated by spatially resolved Raman spectroscopy. The red shifted transverse optical (TO) and longitudinal optical (LO) phonons due to residual strain, along with asymmetry to TO phonon â¼358Â cmâ1 are observed in GaP/Ge(111). The peak intensity variation of mode â¼358Â cmâ1 with respect to TO phonon across the crystallographic morphed surface of GaP micro structures is associated with the topographical variations using atomic force microscopy mapping and Raman spectroscopy performed on both in plane and cross-sectional surface. Co-existence of GaP allotropes, i.e. wurtzite phase near heterojunction interface and dominant zinc-blende phase near surface is established using the spatially resolved polarized Raman spectroscopy from the cross sectional surface of heterostructures. This consistently explains effect of surface morphology on Raman spectroscopy from GaP(111). The study shows the way to identify crystalline phases in other advanced semiconductor heterostructures without any specific sample preparation.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
R. Aggarwal, Alka A. Ingale, V.K. Dixit,