Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5349455 | Applied Surface Science | 2015 | 5 Pages |
Abstract
Graphene transistors on SiO2/Si were irradiated with 5, 10, and 15Â MeV protons at a dose rate of 2Â ÃÂ 1014Â cmâ2. The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10Â MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15Â MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15Â MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.
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Authors
Sanggeun Lee, Jungmok Seo, Juree Hong, Seul Hyun Park, Joo-Hee Lee, Byung-Wook Min, Taeyoon Lee,