| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5349775 | Applied Surface Science | 2014 | 5 Pages |
Abstract
- Quadripartite alloy FeCrNiC was used as rectifier contact on p-Si.
- I-V characteristics of FeCrNiC/p-Si device show a good rectifying behaviour.
- The electrical properties of FeCrNiC/p-Si device have been investigated in the temperature range of 80-320Â K.
- Temperature dependence of the apparent BH shows double Gaussian distribution (DGD) character.
- Obtained results confirm the predictions of the multiple GD of the BH approach considering nanoscale spatial inhomogeneities at the interface of FeCrNiC/p-Si structure.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A.N. BeÅtaÅ, S. Yazıcı, F. AktaÅ, B. Abay,