Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures

We prepared Pt/HfO2/TiN metal-insulator-metal structures for resistive switching experiments. The HfO2 films were prepared by thermal, ozone and plasma assisted atomic layer deposition. The deposition techniques yielded HfO2 films that were conducive to stable and reproducible bipolar resistive switching. We observed that the forming voltage scaled with the HfO2 film thickness. The structures did not show degradation after 104 consecutive resistive switching operations in a millisecond pulsed regime.