Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5349860 | Applied Surface Science | 2014 | 14 Pages |
Abstract
Hafnium oxide is an interesting material for a broad range of applications. Infrared spectroscopy was used to study the impact of aqueous environment and mechanism of formation of 5 nm HfO2 films after nitric acid oxidation (NAOS) of n-doped Si (1 0 0) substrates. Samples were annealed in N2 atmosphere at different temperatures 200-400 °C for 10 min. For NAOS passivation 100% vapor of HNO3 (set A) and 98% aqueous solution (set B) was used. FTIR measurements reveal silicon oxide layer formation and formation of HfSiOx layer. There are differences in HfSiOx layer formation between samples of set A and B caused by different environment. This layer of samples set B is thinner because of SiOH bonds that may inhibit formation of this layer. Absorption IR spectra of set A show more ordered SiOx layer in comparison with samples of set B. The structural properties of HfO2 are crucial for application in the future.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Kopani, M. Mikula, E. PinÄÃk, H. Kobayashi, M. Takahashi,