Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5349869 | Applied Surface Science | 2014 | 5 Pages |
Abstract
The sequential sputtering technology was developed for the formation of transparent and conductive ZnO ultrathin films (doped by Al, Ga) of thicknesses about 100 nm. When comparing continuous and sequential deposition modes, the latter increased the preferential [0 0 1] columnar texture of ZnO:(Ga, Al) films, lowered their grain and crystallite sizes (25 nm/40 nm and 33 nm/47 nm), lattice stress gradients (0.147 GPa nmâ1/0.180 GPa nmâ1) and microstrains (8.4 Ã 10â3/5.6 Ã 10â3), rose their transmitance in Vis/NIR region (above 80%) and decreased their refractive index (values below 2). Post-deposition annealing of sequentially sputtered films in vacuum at 400 °C shifted their transmittance to the shorter wavelength in UV region and increased refractive index to values above 2.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
I. Novotny, S. Flickyngerova, V. Tvarozek, P. Sutta, M. Netrvalova, D. Rossberg, P. Schaaf,