Structural and electrical characterization of diamond films deposited in nitrogen/oxygen containing gas mixture by linear antenna microwave CVD process

In this paper we demonstrate the large area deposition of n-type conductive nanocrystalline diamond thin films on p-type Si substrates. We show that adding N2 into CH4/H2/CO2 gas mixture allows a wide controlling of diamond film morphology from micro- to nanocrystalline, blockstone-like or porous-like morphology potentially suitable for various applications. Moreover, after adding we found that the diamond films revealed a deep level with activation energy of 0.44 ± 0.03 eV.