Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5350139 | Applied Surface Science | 2017 | 21 Pages |
Abstract
Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib â¼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cmâ1 and a band gap value â¼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.
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Authors
Kunal J. Tiwari, Vijay Vinod, A. Subrahmanyam, P. Malar,